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| 83. | | Ceretta, S. Maiz para silo ln: Jornada Cultivos de Verano, 1996 : La Estanzuela [Memorias]. Montevideo (Uruguay): INIA, 1996. p21-26 Serie Actividades de Difusion (INIA) Participaron en esta Jornada : Programa Nacional de Cultivos de Verano y Programa Nacional de Evaluación de Cultivares| Biblioteca(s): INIA La Estanzuela; INIA Tacuarembó. |
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| 85. | | BENNADJI, Z.; ALONSO, R.; CASTRO, M.; CIGANDA, V.; GOÑI, C.; PÉREZ DE VIDA, F.; VÁZQUEZ, D.; BERGER, A.; GASO, D.; CERETTA, S.; FASSIO, A.; SALDAIN, N.E.; OTERO, A. Mejoramiento genético más ecofisiología: generando espacios interdisciplinarios para la disminución de la vulnerabilidad al cambio climático Revista INIA Uruguay, 2011, no. 25 p. 43-48 (Revista INIA; 25)| Biblioteca(s): INIA Las Brujas; INIA Tacuarembó. |
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| 86. | | LARZABAL, J.; YAMANAKA, N.; RODRIGUEZ, M.; CERETTA, S.; STEWART, S. Mejoramiento genético por resistencia a roya asiática en soja. In: Sociedad Uruguaya de Fitopatología Jornada Uruguaya de Fitopatología, 6., Jornada Uruguaya de Protección Vegetal, 4., 21-22 octubre, 2021, Montevideo, Uruguay. Libro de resúmenes. Montevideo (UY): Sociedad Uruguay de Fitopatología (SUFIT), 2021. p. 45 Financiamiento: Parcial por JIRCAS Research project "Development of technologies for the control of migratory plant pest and transboundary diseases".| Biblioteca(s): INIA Treinta y Tres. |
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| 88. | | FASSIO, A.; RODRIGUEZ, M.; IBAÑEZ, W.; PÉREZ, O.; CERETTA, S.; RESTAINO, E.; RABAZA, C.; VERGARA, G. Modelo de predicción para los estadios fenológicos del cultivo de soja. Nueva herramienta web. Revista INIA Uruguay, 2014, no. 39, p. 40-43 (Revista INIA; 39) Se incluye link de acceso a la nueva herramienta para pronosticar el estadio fenológico en soja y otros cultivos de verano, disponible en el sitio Web de INIA| Biblioteca(s): INIA La Estanzuela. |
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| 92. | | SEVERINI, A.D.; ÁLVAREZ PRADO, S.; OTEGUI, M.E.; VEGA, C.R.C.; ZUIL, S.; KAVANOVÁ, M.; CERETTA, S.; ACRECHE, M.; SCHOLZ DRODOWSKI, R.F.; SERRAGO, R.A.; MIRALLES, D.J. Predicting soybean development with a simple photothermal dynamic algorithm. In: 7º Congreso de Soja del MERCOSUR, MERCOSOJA, Asociación de la Cadena de la Soja Argentina, Rosario, 4 al 5 de septiembre 2019. This work was funded by the project 'Bases fisiológicas y genéticas de las respuestas de trigo y soja a limitantes bióticas y abióticas: estudios orientados al mejoramiento genético y al manejo de los cultivos en el Cono Sur' from PROCISUR.| Biblioteca(s): INIA La Estanzuela. |
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| 93. | | CERETTA, S.; SASTRE, M.; MONTAÑA, M.; CASTRO, B.; ROSSI, C.; STEWART, S.; VÁZQUEZ, D.; MARANGES, F. Programa de mejoramiento genético de soja: variedad de Soja No-GM SJC13625. Cultivos. Revista INIA Uruguay, Diciembre 2023, no.75 p.51-53. (Revista INIA; 75).| Biblioteca(s): INIA Las Brujas. |
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Registro completo
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Biblioteca (s) : |
INIA La Estanzuela. |
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Fecha actual : |
25/09/2020 |
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Actualizado : |
12/08/2021 |
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Tipo de producción científica : |
Artículos en Revistas Indexadas Internacionales |
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Circulación / Nivel : |
Internacional - -- |
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Autor : |
VANDEGEER, R.K.; ZHAO, C.; CIBILS-STEWART, X.; WUHRER, R.; HALL, C.R.; HARTLEY, S.E.; TISSUE, D.T.; JOHNSON, S.N. |
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Afiliación : |
REBECCA K. VANDEGEERA, Hawkesbury Institute for the Environment, Western Sydney University, Locked Bag 1797, Penrith, NSW 2751, Australia.; CHENCHEN ZHAO, Hawkesbury Institute for the Environment, Western Sydney University, Locked Bag 1797, Penrith, NSW 2751, Australia.; XIMENA CIBILS-STEWART, INIA (Instituto Nacional de Investigación Agropecuaria), Uruguay; RICHARD WUHRER, Advanced Materials Characterisation Facility (AMCF), Western Sydney University, Locked Bag 1797, Penrith, NSW 2751, Australia.; CASEY R. HALL, Hawkesbury Institute for the Environment, Western Sydney University, Locked Bag 1797, Penrith, NSW 2751, Australia.; SUSAN E. HARTLEY, Department of Animal and Plant Sciences, University of Sheffield, Sheffield, S10 2TN, UK.; DAVID T. TISSUE, Hawkesbury Institute for the Environment, Western Sydney University, Locked Bag 1797, Penrith, NSW 2751, Australia.; SCOTT N. JOHNSON, Hawkesbury Institute for the Environment, Western Sydney University, Locked Bag 1797, Penrith, NSW 2751, Australia. |
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Título : |
Silicon deposition on guard cells increases stomatal sensitivity as mediated by K+ efflux and consequently reduces stomatal conductance. |
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Fecha de publicación : |
2021 |
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Fuente / Imprenta : |
Physiologia Plantarum, Volume 171, Issue 3, Pages 358-370, March 2021. Doi: https://doi.org/10.1111/ppl.13202 |
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DOI : |
doi.org/10.1111/ppl.13202 |
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Idioma : |
Inglés |
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Notas : |
Article history: First published: 03 September 2020/Version of Record online:16 September 2020/Accepted manuscript online:
03 September 2020/Manuscript accepted:01 September 2020/Manuscript revised:27 August 2020/Manuscript received:30 June 2020/First published: 03 September 2020. Corresponding author: e-mail: R.Vandegeer@westernsydney.edu.au |
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Contenido : |
Abstract: Silicon (Si) has been widely reported to improve plant resistance to water stress via various mechanisms including cuticular Si deposition to reduce leaf transpiration. However, there is limited understanding of the effects of Si on stomatal physiology, including the underlying mechanisms and implications for resistance to water stress. We grew tall fescue (Festuca arundinacea Schreb. cv. Fortuna) hydroponically, with or without Si, and treated half of the plants with 20% polyethylene glycol (PEG) to impose physiological drought (osmotic stress). Scanning electron microscopy (SEM) in conjunction with X-ray mapping (XRM) found that Si was deposited on stomatal guard cells and as a sub-cuticular layer in Si-treated plants. Plants grown in Si had a 28% reduction in stomatal conductance and a 23% reduction in cuticular conductance. When abscisic acid was applied exogenously to epidermal leaf peels to promote stomatal closure, Si plants had 19% lower stomatal aperture compared to control plants (i.e.increased stomatal sensitivity) and an increased efflux of guard cell K+ ions. However, the changes in stomatal physiology with Si were not substantial enough to improve water stress resistance, as shown by a lack of significant effect of Si on water potential, growth, photosynthesis and water-use efficiency.
Our findings suggest a novel underlying mechanism for reduced stomatal conductance with Si application; specifically, that Si deposition on stomatal guard cells promotes greater stomatal sensitivity as mediated by guard cell K+ efflux. MenosAbstract: Silicon (Si) has been widely reported to improve plant resistance to water stress via various mechanisms including cuticular Si deposition to reduce leaf transpiration. However, there is limited understanding of the effects of Si on stomatal physiology, including the underlying mechanisms and implications for resistance to water stress. We grew tall fescue (Festuca arundinacea Schreb. cv. Fortuna) hydroponically, with or without Si, and treated half of the plants with 20% polyethylene glycol (PEG) to impose physiological drought (osmotic stress). Scanning electron microscopy (SEM) in conjunction with X-ray mapping (XRM) found that Si was deposited on stomatal guard cells and as a sub-cuticular layer in Si-treated plants. Plants grown in Si had a 28% reduction in stomatal conductance and a 23% reduction in cuticular conductance. When abscisic acid was applied exogenously to epidermal leaf peels to promote stomatal closure, Si plants had 19% lower stomatal aperture compared to control plants (i.e.increased stomatal sensitivity) and an increased efflux of guard cell K+ ions. However, the changes in stomatal physiology with Si were not substantial enough to improve water stress resistance, as shown by a lack of significant effect of Si on water potential, growth, photosynthesis and water-use efficiency.
Our findings suggest a novel underlying mechanism for reduced stomatal conductance with Si application; specifically, that Si deposition on stomatal guard cells promote... Presentar Todo |
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Palabras claves : |
LEAF WATER POTENTIAL; PHOTOSYNTHESIS; RELATIVE WATER CONTENT; SCANNNG ELECTON MICROSCOPY. |
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Thesagro : |
FESTUCA ARUNDINACEA. |
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Asunto categoría : |
H01 Protección de plantas - Aspectos generales |
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Marc : |
LEADER 02859naa a2200289 a 4500
001 1061345
005 2021-08-12
008 2021 bl uuuu u00u1 u #d
024 7 $adoi.org/10.1111/ppl.13202$2DOI
100 1 $aVANDEGEER, R.K.
245 $aSilicon deposition on guard cells increases stomatal sensitivity as mediated by K+ efflux and consequently reduces stomatal conductance.$h[electronic resource]
260 $c2021
500 $aArticle history: First published: 03 September 2020/Version of Record online:16 September 2020/Accepted manuscript online: 03 September 2020/Manuscript accepted:01 September 2020/Manuscript revised:27 August 2020/Manuscript received:30 June 2020/First published: 03 September 2020. Corresponding author: e-mail: R.Vandegeer@westernsydney.edu.au
520 $aAbstract: Silicon (Si) has been widely reported to improve plant resistance to water stress via various mechanisms including cuticular Si deposition to reduce leaf transpiration. However, there is limited understanding of the effects of Si on stomatal physiology, including the underlying mechanisms and implications for resistance to water stress. We grew tall fescue (Festuca arundinacea Schreb. cv. Fortuna) hydroponically, with or without Si, and treated half of the plants with 20% polyethylene glycol (PEG) to impose physiological drought (osmotic stress). Scanning electron microscopy (SEM) in conjunction with X-ray mapping (XRM) found that Si was deposited on stomatal guard cells and as a sub-cuticular layer in Si-treated plants. Plants grown in Si had a 28% reduction in stomatal conductance and a 23% reduction in cuticular conductance. When abscisic acid was applied exogenously to epidermal leaf peels to promote stomatal closure, Si plants had 19% lower stomatal aperture compared to control plants (i.e.increased stomatal sensitivity) and an increased efflux of guard cell K+ ions. However, the changes in stomatal physiology with Si were not substantial enough to improve water stress resistance, as shown by a lack of significant effect of Si on water potential, growth, photosynthesis and water-use efficiency. Our findings suggest a novel underlying mechanism for reduced stomatal conductance with Si application; specifically, that Si deposition on stomatal guard cells promotes greater stomatal sensitivity as mediated by guard cell K+ efflux.
650 $aFESTUCA ARUNDINACEA
653 $aLEAF WATER POTENTIAL
653 $aPHOTOSYNTHESIS
653 $aRELATIVE WATER CONTENT
653 $aSCANNNG ELECTON MICROSCOPY
700 1 $aZHAO, C.
700 1 $aCIBILS-STEWART, X.
700 1 $aWUHRER, R.
700 1 $aHALL, C.R.
700 1 $aHARTLEY, S.E.
700 1 $aTISSUE, D.T.
700 1 $aJOHNSON, S.N.
773 $tPhysiologia Plantarum, Volume 171, Issue 3, Pages 358-370, March 2021. Doi: https://doi.org/10.1111/ppl.13202
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